IXYS IXYX30N170CV1 IGBT晶体管 1700V/108A 高压 XPT IGBT

Technology: Si

Unit Weight: 12.872 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 937 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current Ic Max: 108 A

Collector-Emitter Saturation Voltage: 4 V

Continuous Collector Current at 25 C: 100 A