IXYS IXYX40N450HV IGBT晶体管高压XPT IGBT

Technology: Si

Unit Weight: 6.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 660 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Collector-Emitter Saturation Voltage: 3.9 V

Continuous Collector Current at 25 C: 95 A