IXYS LSIC1MO170E0750 SiC MOSFETS TO247 1.7KV 4.4A N-CH 碳化硅

Technology: SiC

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Id - Continuous Drain Current: 6.2 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4 V