IXYS LSIC1MO170T0750 SiC MOSFETS 1700V/750mohm SiC MOSFET TO-263-7L

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 65 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 6.4 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 750 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V