IXYS MIXA20WB1200TML IGBT模块转换器-制动逆变器模块

Technology: Si

Configuration: 3-Phase

Mounting Style: Screw Mount

Pd - Power Dissipation: 100 W, 63 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 28 A, 17 A