IXYS MIXA60HU1200VA IGBT模块 XPT IGBT模块

Width: 31.6 mm

Height: 17 mm

Length: 63 mm

Technology: Si

Pd - Power Dissipation: 290 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 85 A