IXYS MIXA80R1200VA IGBT模块 升压/制动模块 XPT IGBT

Technology: Si

Unit Weight: 37 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 390 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 120 A