Technology: Si
Unit Weight: 8 g
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 156 A
Rds On - Drain-Source Resistance: 8.3 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
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Technology: Si
Unit Weight: 8 g
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 156 A
Rds On - Drain-Source Resistance: 8.3 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
直接联系认证专家