IXYS MMIX1Y100N120C3H1 IGBT模块 SMPD IGBTs 功率器件

Technology: Si

Unit Weight: 8 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 400 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.9 V

Continuous Collector Current at 25 C: 92 A