IXYS MMIX4B22N300 IGBT晶体管 SMPDB 3KV 22A IGBT

Technology: Si

Unit Weight: 8 g

REACH - SVHC: Details

Configuration: Quad

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 3 kV

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 38 A