IXYS NGB8206ANSL3G IGBT晶体管 IGBT 20A 350V N沟道
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ModelNGB8206ANSL3G
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 150 W
Gate-Emitter Leakage Current: 350 uA
Maximum Gate Emitter Voltage: - 15 V, 15 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 390 V
Collector-Emitter Saturation Voltage: 1.3 V
Continuous Collector Current at 25 C: 20 A
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