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1, the breakdown voltage of VDSS measuring range: 0 - 1999V, accuracy: less than 2.5%.
2, IDSS can be divided into three options: 1mA, 250uA, 25uA.
3, open grid voltage VGS (th) measurement range: 0 - 10V. Accuracy: less than 5%.
4, Gfs transconductance test current Idm: not less than 1 - 50 A continuously adjustable accuracy: less than 10%.
5, Gfs transconductance test range: 1 - 100.
Datasheet
Product Description:It can be used to test the main parameters of N-channel conductive power field effect transistors with a nominal current of about 2-85A and a power of less than 300W.
Main test function
1. The breakdown voltage VDSS, VGS (th) and Gfs of the MOSFET are tested
2. Tthe breakdown voltage of V IGBT (BR) ces, VGE (th), Gfs test.
3. The power field effect transistor and IGBT in the 50A under any current state consistency test, can be used for matching.
4. For other higher current and power field effect transistor and IGBT test: (see below)
5. A variety of crystal triode, diode , Voltage regulator , breakdown voltage test.
6. Varistor voltage test etc.
