Linear Integrated Systems LS5912-SOIC-8L-B-CT JFET宽带，高增益，单片双路，N沟JFET

Technology: Si

Unit Weight: 73 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Gate-Source Cutoff Voltage: - 5 V

Maximum Drain Gate Voltage: 10 V

Drain-Source Current at Vgs=0: 40 mA

Id - Continuous Drain Current: 5 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7000 uS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: - 25 V