Linear Integrated Systems LSBF510 SOT23 3L-CT JFET高增益，单N沟JFET放大器

Technology: Si

Unit Weight: 8.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Gate-Source Cutoff Voltage: 2.5 V

Drain-Source Current at Vgs=0: 3 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vgs - Gate-Source Breakdown Voltage: 30 V