Linear Integrated Systems LSK189-SOT-23-3L-CT JFET 超低噪声、低漂移、单N沟道JFET

Technology: Si

Unit Weight: 8.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 3.5 V

Maximum Drain Gate Voltage: 15 V

Drain-Source Current at Vgs=0: 5 mA

Id - Continuous Drain Current: 2 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1500 uS

Vgs - Gate-Source Breakdown Voltage: - 60 V

Vds - Drain-Source Breakdown Voltage: 60 V