Linear Integrated Systems LSK389A-TO-71-6L-BK JFET低噪声，单片双路，N沟JFET

Technology: Si

Unit Weight: 390 mg

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Gate-Source Cutoff Voltage: 6 mV

Maximum Drain Gate Voltage: 10 V

Drain-Source Current at Vgs=0: 6.5 mA

Id - Continuous Drain Current: 2 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 mS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 40 V