Linear Integrated Systems LSK389D-SOIC-8L-TB JFET低噪声，单片双路，N沟JFET

Unit Weight: 73 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Gate-Source Cutoff Voltage: 6 mV

Maximum Drain Gate Voltage: 10 V

Drain-Source Current at Vgs=0: 30 mA

Id - Continuous Drain Current: 2 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 mS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 40 V