Linear Integrated Systems SST210-SOT-143-4L-CT MOSFET 高速N沟道横向DMOS JFET开关

Fall Time: 6 ns

Rise Time: 0.6 ns

Technology: Si

Unit Weight: 9 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 40 V, + 40 V

Typical Turn-On Delay Time: 0.5 ns

Typical Turn-Off Delay Time: 2 ns

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9 mS

Rds On - Drain-Source Resistance: 50 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V