MACOM CG2H30070F 氮化镓场效应晶体管 70W，直流-4.0GHz，28V，射频功率氮化镓高电子迁移率晶体管

Gain: 12.4 dB

Technology: GaN

Unit Weight: 10.466 g

Output Power: 70 W

Mounting Style: Screw Mount

Development Kit: CG2H30070F-TB1

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: DC

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V