MACOM CG2H80015D-GP4 氮化镓场效应晶体管 氮化镓高电子迁移率晶体管芯片 直流-8.0GHz，15瓦

Gain: 17 dB

Technology: GaN

Unit Weight: 2.140 g

Output Power: 15 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 8 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V