MACOM CGH09120F 氮化镓场效应晶体管 GaN HEMT 超高频-2.5GHz，120瓦

Gain: 21 dB

Technology: GaN

Output Power: 20 W

Configuration: Single

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 56 W

Maximum Drain Gate Voltage: 28 V

Maximum Operating Frequency: 2.5 GHz

Minimum Operating Frequency: 300 MHz

Id - Continuous Drain Current: 28 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V