MACOM CGH27030S 氮化镓场效应晶体管 GaN HEMT DC-6.0GHz，30瓦

Gain: 18 dB

Technology: GaN

Output Power: 30 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 21.6 W

Maximum Drain Gate Voltage: 28 V

Maximum Operating Frequency: 2.7 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 84 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V