MACOM CGH27060F 氮化镓场效应晶体管 氮化镓高电子迁移率晶体管 超高频3.0GHz，60瓦

Gain: 14 dB

Technology: GaN

Unit Weight: 10.566 g

Output Power: 60 W

Configuration: Single

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 56 W

Maximum Operating Frequency: 2.7 GHz

Minimum Operating Frequency: 30 MHz

Id - Continuous Drain Current: 14 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V