MACOM CGH35015F 氮化镓场效应晶体管 15W，氮化镓高电子迁移率晶体管，28V，直流-6.0GHz，法兰

Gain: 12 dB

Technology: GaN

Output Power: 15 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 7 W

Maximum Operating Frequency: 3.9 GHz

Minimum Operating Frequency: 3.3 GHz

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V