MACOM CGH40006P 氮化镓高电子迁移率晶体管 GaN HEMT DC-6.0GHz，6瓦

Gain: 13 dB

Technology: GaN

Unit Weight: 4.605 g

Output Power: 9 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: CGH40006P-TB

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 2 GHz

Id - Continuous Drain Current: 750 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V