MACOM CGH40120F 氮化镓高电子迁移率晶体管 GaN HEMT 直流-2.5GHz，120瓦

Gain: 19 dB

Technology: GaN

Unit Weight: 30.467 g

Output Power: 120 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: CGH40120F-TB

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.5 GHz

Minimum Operating Frequency: 1 GHz

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V