MACOM CGH60015D-GP4 氮化镓高电子迁移率晶体管 GaN HEMT芯片 DC-6.0GHz，15瓦

Gain: 15 dB

Technology: GaN

Unit Weight: 3.698 g

Output Power: 15 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 4 GHz

Id - Continuous Drain Current: 1.5 A

Rds On - Drain-Source Resistance: 1 Ohms

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V