MACOM CGH60120D-GP4 氮化镓高电子迁移率晶体管 GaN HEMT芯片 直流-6.0GHz，120瓦

Gain: 13 dB

Technology: GaN

Output Power: 120 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 8 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 4 GHz

Id - Continuous Drain Current: 12 A

Rds On - Drain-Source Resistance: 100 mOhms

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3 V