MACOM CGHV1F006S 氮化镓场效应晶体管 GaN HEMT DC-18GHz，6瓦

Gain: 16 dB

Technology: GaN

Unit Weight: 1.449 g

Output Power: 6 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Maximum Operating Frequency: 18 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 950 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 3 V