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Gain: 16 dB
Technology: GaN
Unit Weight: 1.449 g
Output Power: 6 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Maximum Operating Frequency: 18 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 950 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
