MACOM CGHV1F025S 氮化镓碳化硅高电子迁移率晶体管 GaN HEMT 直流-15GHz，25瓦

Gain: 11 dB

Technology: GaN

Unit Weight: 3.772 g

Output Power: 25 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: CGHV1F025S-TB

Transistor Type: GaN HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Maximum Operating Frequency: 15 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 3 V