MACOM CGHV1J025D-GP4 氮化镓高电子迁移率晶体管 GaN HEMT 芯片 DC-18GHz，25瓦

Gain: 17 dB

Technology: GaN

Unit Weight: 2.285 g

Output Power: 25 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 4 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 18 GHz

Minimum Operating Frequency: 10 MHz

Id - Continuous Drain Current: 2 A

Rds On - Drain-Source Resistance: 600 mOhms

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 3 V