MACOM CGHV31500F 氮化镓场效应晶体管 500W，氮化镓高电子迁移率晶体管，50V，2.7-3.1GHz，脉冲

Gain: 12.5 dB

Technology: GaN

Output Power: 705 W

Configuration: Single

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.1 GHz

Minimum Operating Frequency: 2.7 GHz

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3 V