MACOM CGHV31500F1 氮化镓场效应晶体管 500W，氮化镓高电子迁移率晶体管，50V，2.7-3.1GHz，长脉冲，法兰

Technology: GaN

Output Power: 500 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 418 W

Maximum Drain Gate Voltage: - 2.7 V

Maximum Operating Frequency: 3.1 GHz

Minimum Operating Frequency: 2.7 GHz

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 75 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 150 V