MACOM CGHV35400F 氮化镓场效应晶体管 GaN HEMT 2.9-3.5GHz，400瓦

Gain: 11 dB

Technology: GaN

Output Power: 500 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.5 GHz

Minimum Operating Frequency: 2.9 GHz

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V