MACOM CGHV37400F 氮化镓场效应晶体管放大器，400瓦，氮化镓高电子迁移率晶体管，50伏，3.5-3.7吉赫

Gain: 14 dB

Technology: GaN

Output Power: 525 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.7 GHz

Minimum Operating Frequency: 3.3 GHz

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 50 Ohms

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 3 V