MACOM CGHV40100P 氮化镓场效应晶体管 100W, 氮化镓高电子迁移率晶体管, 直流-4.0GHz, 50V, 830223P

Gain: 17.5 dB

Technology: GaN

Output Power: 100 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Maximum Operating Frequency: 3 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 8.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3 V