MACOM CGHV40200PP 氮化镓场效应晶体管 GaN HEMT 直流-2.5GHz，180瓦

Gain: 16.1 dB

Technology: GaN

Output Power: 250 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: CGHV40200PP-AMP1

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 166 W

Maximum Operating Frequency: 1.9 GHz

Minimum Operating Frequency: 1.7 GHz

Id - Continuous Drain Current: 8.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3 V