MACOM CGHV60040D-GP4 氮化镓高电子迁移率晶体管 GaN HEMT芯片 DC-6.0GHz，40瓦

Gain: 18 dB

Technology: GaN

Unit Weight: 3.018 g

Output Power: 40 W

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 3.2 A

Vds - Drain-Source Breakdown Voltage: 50 V