MACOM CGHV60075D5-GP4 氮化镓高电子迁移率晶体管 GaN HEMT芯片 DC-6.0GHz，75瓦

Gain: 17 dB

Technology: GaN

Output Power: 75 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 41.6 W

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 10 A

Rds On - Drain-Source Resistance: 280 mOhms

Vgs - Gate-Source Breakdown Voltage: 150 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 10 V, 2 V