MACOM CGHV60170D-GP4 氮化镓高电子迁移率晶体管 GaN HEMT 芯片 直流-6.0GHz，170瓦

Gain: 18 dB

Technology: GaN

Output Power: 170 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 8 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 12.6 A

Vds - Drain-Source Breakdown Voltage: 50 V