MACOM CGHV96050F2 氮化镓高电子迁移率晶体管 GaN HEMT 7.9-9.6GHz，50瓦

Gain: 10 dB

Technology: GaN

Output Power: 50 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: CGHV96050F2-TB

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 9.6 GHz

Minimum Operating Frequency: 8.4 GHz

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 3 V

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V