MACOM CGHV96100F2 氮化镓高电子迁移率晶体管 GaN HEMT 7.9-9.6GHz，100瓦

Gain: 12.4 dB

Technology: GaN

Unit Weight: 65.235 g

Output Power: 131 W

Configuration: Single

Mounting Style: Screw Mount

Development Kit: CGHV96100F2-TB

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 9.6 GHz

Minimum Operating Frequency: 7.9 GHz

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 3 V