MACOM GTRA384802FC-V1-R0 氮化镓场效应晶体管 480W 氮化镓高电子迁移率晶体管 48V 3800MHz

Gain: 13 dB

Technology: GaN

Output Power: 400 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.8 GHz

Minimum Operating Frequency: 3.6 GHz

Id - Continuous Drain Current: 9.5 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 125 V