MACOM GTVA220701FA-V1-R2 氮化镓场效应晶体管 射频LDMOS场效应晶体管
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ModelGTVA220701FA-V1-R2
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Gain: 22 dB
Technology: GaN
Output Power: 45 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 2.17 GHz
Minimum Operating Frequency: 1.805 GHz
Id - Continuous Drain Current: 13.5 A
Maximum Operating Temperature: + 225 C
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3.8 V
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