MACOM GTVA263202FC-V1-R0 氮化镓场效应晶体管 射频LDMOS场效应晶体管

Gain: 17 dB

Technology: GaN

Output Power: 340 W

Configuration: Dual Common Source

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.69 GHz

Minimum Operating Frequency: 2.62 GHz

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 225 C

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V