MACOM MAGX-011086 氮化镓场效应晶体管 M/A-COM 技术解决方案

Gain: 9 dB

Technology: GaN

Unit Weight: 7.544 g

Output Power: 4 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: MAGX-011086-SMBPPR

Transistor Type: GaN HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 3 V

Vds - Drain-Source Breakdown Voltage: 28 V

Vgs th - Gate-Source Threshold Voltage: - 2.5 V