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Gain: 9 dB
Technology: GaN
Unit Weight: 7.544 g
Output Power: 4 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: MAGX-011086-SMBPPR
Transistor Type: GaN HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V to 3 V
Vds - Drain-Source Breakdown Voltage: 28 V
Vgs th - Gate-Source Threshold Voltage: - 2.5 V
