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Technology: Si
Configuration: Single
Transistor Type: Bipolar Power
Operating Frequency: 1.215 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 1.34 kW
Emitter- Base Voltage VEBO: 3 V
Continuous Collector Current: 32.5 A
Maximum Operating Temperature: + 200 C
Collector- Emitter Voltage VCEO Max: 65 V
