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Gain: 17 dB
Width: 24.77 mm
Height: 6.58 mm
Length: 26.04 mm
Technology: Si
Unit Weight: 41.165 g
Output Power: 150 W
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Operating Frequency: 150 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: + 40 V
Id - Continuous Drain Current: 16 A
Maximum Operating Temperature: + 200 C
Forward Transconductance - Min: 4 mhos
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: 3 V
